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Last Loaded on Web: Monday, April 01, 2013
Solid State and Superconductivity Abstracts provides unparalleled current research and applications across the field of physics and conductivity. Over 3,000 serial titles and hundreds of non-serial publications are indexed and abstracted by expert Cambridge Scientific Abstracts staff. The database covers all aspects of theory, production, and application of solid state materials and development as well as the new high- and low-temperature superconductivity technology. Topics covered include phase, crystal, and mechanical properties of solids, optical and dielectric properties, conductive and magnetic properties, electronic structure and energy gaps, SQUIDs, impurity effects, flux structure, critical current, ceramics, twinning phenomena, and more.
USE FILE 68to search for abstracted articles relating to all aspects of physics. USE /TI AND /DEfor precise subject searching: S QUANTUM(W)EFFICIENCY/TI,DEUSE SUBJECT HEADINGS orSUBJECT HEADING CODESto narrow a search to a topic. S COMPOUND(W)SEMICONDUCTORS/SHS SC=P4 USE RANKto find experts working in an area of interest. S LASER DIODE?RANK AU
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Major areas of coverage include:
Solid State and Superconductivity Abstracts includes information abstracted from over 3,000 scientific and technical journals, government reports, conference proceedings, dissertations, books, and other publications. The database corresponds to the print Solid State and Superconductivity Abstracts.
| Dates Covered: | 1968 to the present |
|---|---|
| File Size: | Over 254,184 records as of July 2005 |
| Update Frequency: | Monthly |
| ACRONYM | CATEGORY NAME |
|---|---|
| ELECTENG | Electrical Engineering |
| ENERGY | Energy |
| ENG | Engineering |
| MATH | Mathematics |
| NUCSCI | Nuclear Science |
| PHYSICS | Physics |
| SCITECH | Science and Technology |
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Solid State and Superconductivity Abstracts is produced by CSA. Questions concerning file content should be directed to: 7200 Wisconsin Avenue Bethesda, MD 20814
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Database copyrighted by CSA. All rights reserved. Although this database was formulated with a reasonable standard of care, CSA makes no representation or warranty, express or implied, as to the accuracy, completeness, merchantability, or fitness for use of the database. Except as set forth in Dialog's Electronic Redistribution and Archiving Policy, the database may not be reproduced, stored in machine-readable form, or transmitted by any means without the written permission of the publisher.
| DIALOG(R)File 68: Solid State & Super. Abs | |
| (c) 2005 CSA. All rts. reserv. | |
| AA= | 0000016434 IP ACCESSION NO: 200504-82-08914 |
| /TI | Zinc oxide - analogue of GaN with new perspective possibilities |
| AU= | Karpina, V A; Lazorenko, V I; Lashkarev, C V; Dobrowolski, V D; Kopylova, L |
| I; Baturin, V A; Pustovoytov, S A; Karpenko, A J; Eremin, S A; Lytvyn, P M | |
| CS= | Institute for Problems of Material Science, National Academy of Sciences of |
| Ukraine, 3, Krzhyzhanovsky str., Kyiv, 03142, Ukraine | |
| JN=,SO=,PD= | Crystal Research and Technology, v 39, n 11, Nov. 2004 |
| PAGES: 980-992 | |
| PY= | PUBLICATION DATE: 2004 |
| PU= | PUBLISHER: Wiley-VCH Verlag GmbH, P.O. Box 10 11 61, Weinheim, D-69451 |
| CP= | COUNTRY OF PUBLICATION: Germany |
| PUBLISHER URL: http://www.interscience.wiley.com | |
| PUBLISHER EMAIL: cs-journals@wiley.co.uk | |
| DT= | DOCUMENT TYPE: Journal Article |
| RT= | RECORD TYPE: Abstract |
| LA= | LANGUAGE: English |
| SN= | ISSN: 0232-1300 |
| NOTES: Numerical Data; Spectra; Diffraction Patterns; Graphs | |
| NO. OF REFS.: 25 | |
| DOI: 10.1002/crat.200310283 | |
| FS= | FILE SEGMENT: Solid State & Superconductivity Abstracts |
| ABSTRACT: | |
| /AB | Zinc oxide due to specific electrical, optical and acoustic properties is |
| the important semiconductor material, which has many various applications. | |
| There is growing interest in ZnO due to its potential applicability for | |
| optoelectronic devices such as light-emitting diodes, laser diodes and | |
| detectors for UV wavelength range. ZnO properties are very close to those | |
| of widely recognized semiconductor GaN. The band gap of ZnO (3.37 eV) is | |
| close to that of GaN (3.39 eV) but ZnO exciton binding energy (60 meV) is | |
| twice larger than that of GaN (28 meV). Optically pumped UV lasing have | |
| been demonstrated at room temperature using high textured ZnO films. The | |
| excitonic gain close to 300 cm -1 was achieved. ZnO thin films are expected | |
| to have higher quantum efficiency in UV semiconductor laser than GaN. The | |
| physical properties of ZnO are considered. PEMOCVD technology was used to | |
| deposit piezoelectric and highly transparent electroconductive ZnO films. | |
| Their properties are discussed. The experiments on polycrystalline ZnO | |
| films deposited by RF magnetron sputtering at different partial pressure of | |
| oxygen are presented. AFM images were studied in tapping mode for deposited | |
| films. The investigated films were dielectric ones and had optical | |
| transparency within 65-85% at thickness in the interval 0.2-0.6 5m. | |
| /DE | DESCRIPTORS: Zinc oxides; Gallium nitrides; Semiconductors; Electric |
| potential; Binding energy; Light-emitting diodes; Quantum efficiency; | |
| Laser diodes | |
| SC=,/SH,SH= | SUBJ CATG: 82, Compound Semiconductors |
| SEARCH SUFFIX |
DISPLAY CODE |
FIELD NAME |
INDEXING |
SELECT EXAMPLES |
|---|---|---|---|---|
| None | None | All Basic Index Fields | Word | S SEMICONDUCTOR(W)MATERIAL |
| /AB | AB | Abstract | Word | S ZINC(W)OXIDE/AB |
| /DE | DE | Descriptor1 | Word & Phrase |
S ZINC(W)OXIDES/DE S BINDING ENERGY?/DE |
| /ID | ID | Identifier | Word & Phrase |
S EXTRUSION/ID S HEAT TRANSFER/ID |
| /SH | SH | Subject Category2 | Word | S COMPOUND(W)SEMICONDUCTORS/SH |
| /TI | TI | Title | Word | S ZINC(W)OXIDE/TI |
2 Searchable in the Basic Index and in the Additional Indexes.
| SEARCH PREFIX |
DISPLAY CODE |
FIELD NAME |
INDEXING |
SELECT EXAMPLES |
|---|---|---|---|---|
| AA= | AA | CSA Accession Number | Phrase | S AA=200504-82-08914 |
| AU= | AU | Author | Phrase | S AU=KARPINA, V? |
| None | AZ | DIALOG Accession Number | ||
| BN= | BN | International Standard Book Number (ISBN) | Phrase | S BN=0-8194-1083-7 S BN=081910837 |
| CD= | CD | Conference Date | Phrase | S CD=20040126 |
| CL= | CL | Conference Location | Word | S CL=(SAN(W)JOSE) |
| CP= | CP | Country of Publication | Phrase | S CP=USA S CP=NEW ZEALAND |
| CS= | CS | Corporate Source | Word & Phrase |
S CS=(MATERIAL(S)SCIENCE) S CS=INSTITUTE FOR PROBLEMS? |
| CT= | CT | Conference Title | Word | S CT=(ULTRAFAST(W)PHENOMENA) |
| CY= | CY | Conference Year | Phrase | S CY=2004 |
| DT= | DT | Document Type | Phrase | S DT=JOURNAL ARTICLE |
| FS= | FS | File Segment | Phrase | S FS=SOLID STATE & SUPERCONDUCT? |
| None | II | Digital Object Identifier | ||
| JN= | JN | Journal Name | Phrase | S JN=CRYSTAL RESEARCH? |
| LA= | LA | Language | Phrase | S LA=GERMAN |
| MC= | MC | Materials Classification | Phrase | S MC=ALUMINUM BASE ALLOY? |
| ML= | ML | Materials | Phrase | S ML=AL-4CU |
| NO= | NO | Document Number | Word & Phrase |
S NO=NUREG S NO="NUREG/CP-0029" |
| None | NR | Number of References | ||
| None | NT | Note | ||
| PD= | PD | Publication Date | Phrase | S PD=20041100 |
| PU= | PU | Publisher | Word | S PU=WILEY? |
| PY= | PY | Publication Year | Phrase | S PY=2004 |
| RN= | RN | Report Number | Word & Phrase |
S RN=5383 S RN=SPIE VOLUME 5383 |
| RT= | RT | Record Type | Phrase | S RT=ABSTRACT |
| SC= | SC | Subject Category | Phrase | S SC=82 |
| SH= | SH | Subject Category Text2 | Phrase | S SH=COMPOUND SEMICONDUCTOR? |
| SN= | SN | International Standard Serial Number (ISSN) | Phrase | S SN=0232-1300 |
| SO= | SO | Source Information | Word | S SO=(CRYSTAL(S)TECHNOLOGY) |
| UD= | None | Update | Phrase | S UD=9999 |
| SUFFIX | FIELD NAME | EXAMPLES |
|---|---|---|
| /ABS | Record has an Abstract | S S3/ABS |
| /NOABS | Record is a Citation Only Record | S S3/NOABS |
| /YYYY | Publication Year | S S2/2004 |
| SORTABLE FIELDS | EXAMPLES |
|---|---|
| AA, AU, CS, JN, PY, TI | SORT S3/ALL/PY/D SORT S1/ALL/TI |
| RANK FIELDS | EXAMPLES |
|---|---|
| All phrase- and numeric-indexed fields in the Additional Indexes can be ranked. | RANK DE RANK AU S4 |
| Display codes listed in the Search Options tables can be used to customize output. | TYPE S3/AU,TI/1-5 PRINT S2/TI,AB/ALL |
| NO. |
DIALOGWEB FORMAT |
RECORD CONTENT |
|---|---|---|
| 1 | -- | DIALOG Accession Number |
| 2 | -- | Full Record except Abstract |
| 3 | Medium | Bibliographic Citation |
| 4 | -- | Full Record with Tagged Fields |
| 5 | -- | Full Record |
| 6 | Short | Title and Publication Year |
| 7 | Long | Bibliographic Citation and Abstract |
| 8 | Free | Title, Indexing, and Publication Year |
| 9 | Full | Full Record |
| FIELD NAME | EXAMPLES | ||
|---|---|---|---|
| If the accession number of a specific record is known, it can be used to display the recrod directly. | TYPE 0726149/5 DISPLAY 0074483/AU,TI PRINT 0301964/9 |
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