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Last Loaded on Web: Monday, April 01, 2013
MetalBase provides comprehensive coverage of international metals literature. The file includes references and abstracts for hundreds of technical journals, technical reports, conference papers, reviews, books, and patents.
USE FILE 36to search the global literature on the metals and allied processes. SEARCH DESCRIPTORSto find highly relevant records: S REFRACTIVE INDEX/DEUSE RANKto find experts working in an area of interest: SELECT INDUSTRIAL GASESRANK AU USE FS=to search one of the subfiles: SELECT FS=INSPEC SELECT FS=PASCALUSE /ENG LIMITto limit a search to articles in English: SELECT S3/ENG
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All specialized metals topics are covered including: forms, materials, products, processes, and properties. In addition, all topics relating to welding and allied processes are covered, including:
MetalBase is drawn from all metals categories covered in:
Search fields common to all files are available to search metals topics in this database.
| Dates Covered: | 1966 to the present |
|---|---|
| File Size: | 314,610 records as of June 2004 |
| Update Frequency: | Weekly (Monthly for WeldaSearch records) |
| ACRONYM | CATEGORY NAME |
|---|---|
| AUTO | Automotive Research |
| CERAMICS | Ceramics and Composites |
| COMPOSIT | Ceramics and Composites |
| EECOMP | Electrical Engineering |
| ELECTRON | Computers, Electronics, and Telecommunications Business |
| ENG | Engineering |
| MATERIAL | Materials |
| METALS | Metals |
| MINING | Mining |
| SCITECH | Science and Technology |
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The Weldasearch® database is copyrighted by TWI Ltd. All rights reserved.
Weldasearch® abstracts are intended to represent the contents of the original publications. All reasonable care is taken in abstracting and editing, but TWI Ltd can n ot accept any liability in respect of any error or omission, or of any views expressed, which are those of the original authors, not of TWI.
You may download, copy and use Weldasearch® records personally or pass results of a search to an individual within your own organisation. For distribution outside your organisation a separate agreement is required with TWI Ltd.
| DIALOG(R)File 25:Weldasearch | |
| (c) 2004 TWI Ltd. All rts. reserv. | |
| AA= | 00221071 200614 |
| /TI | Five - fold branched Si [silicon] particles in laser clad AlSi |
| [aluminium alloy] functionally graded materials. | |
| AU= | PEI Y T; HOSSON J T M de |
| CS= | UNIVERSITY OF GRONINGEN |
| JN=,SO= | Acta Materialia, vol.49, no.4. 23 Feb.2001. pp.561-571. 9 fig., 2 tab., 19 |
| ref. | |
| PU= | ACTA MATERIALIA |
| PY=, DT= | PUBLICATION DATE: 20010000 DOCUMENT TYPE: Journal |
| LA=, RT= | LANGUAGE: English RECORD TYPE: Abstract |
| /AB | The results of microstructural investigations on the five-fold twinning and |
| growth features of large Si particles, in Al-40%Si functionally graded | |
| materials produced by a Nd:YAG laser surfacing process on cast Al alloy | |
| substrate (Al, 6.3%Si, 4%Cu), are presented. They were obtained from | |
| orientation imaging microscopy, TEM and SEM. A model of the groove | |
| nucleation followed by the flow of the growth steps over the five ridges | |
| for the rapid elongation of the five-fold Si particles is presented. | |
| [See also Weldasearch 196829] | |
| /DE | DESCRIPTORS: ALUMINIUM ALLOYS; CASTINGS; LASER SURFACING; DEPOSITED METAL; |
| MICROSTRUCTURE; PARTICLES; REFERENCE LISTS; SILICON; LIGHT METALS; | |
| SURFACING; CRYSTAL STRUCTURE | |
| /ID | IDENTIFIERS: GRADED MATERIALS |
| DIALOG(R)File 2:INSPEC | |
| (c) 2004 Institution of Electrical Engineers. All rts. reserv. | |
| AA= | 7893166 INSPEC Abstract Number: A2004-08-7865P-010, B2004-04-7320P-016 |
| /TI | High-k dielectric stack-ellipsometry and electron diffraction |
| measurements of interfacial oxides | |
| AU= | Kisik Choi; Harris, H.R.; Nikishin, S.; Gangopadhyay, S.; |
| Temkin, H. | |
| CS= | NanoTECH Center, Texas Tech Univ., Lubbock, TX, USA |
| JN=,SO=,CT= | Conference: AIP Conference Proc (USA) Conference Characterization and |
| CL= | Metrology for ULSI Technology. 2003 International Conference, Austin, TX, USA, |
| CY= | 14-28 March 2003 |
| PU= | Publ: AIP, 2003 |
| PY= | AIP Conf. Proceedings 186-9 2003 |
| SN= | ISSN: 0094-243X |
| CP= | Country of Publication: USA |
| Refs.: 16 | |
| DT= | Document Type: Conference Paper (PA); Journal Paper (JP) |
| LA= | Language: English |
| /AB | Abstract: With the silicon interface becoming increasingly scrutinized in |
| high dielectric constant materials for SiO/sub 2/ replacement, fine | |
| distinctions in the quality of silicon cleaning can have a large impact on | |
| MOS parameters. One of the cleaning schemes that have potential to replace | |
| the industry standard RCA clean with HF/H/sub 2/O etch is a modified | |
| version of the Shiraki clean. The evolution of Si (100) surface cleaned by | |
| the modified Shiraki method has been investigated by a conventional, | |
| single-wave length ellipsometer. Using Low Energy Electron Diffraction | |
| (LEED), we have calibrated the ellipsometric measurement for the as-cleaned | |
| silicon surface. It was found that a lower baseline of 0.7~0.9 nm from | |
| ellipsometric measurements could be established as equivalent to a clean, | |
| hydrogen passivated surface. To verify the effect of the interfacial oxide | |
| thickness on the dielectric constant of the high-k gate stack, thickness of | |
| the thin-oxide grown under high vacuum condition was measured and | |
| correlated with the dielectric constant of the HfO/sub 2/ gate dielectric | |
| layer. (16 Refs) | |
| /DE | Descriptors: dielectric materials; dielectric thin films; elemental |
| semiconductors; ellipsometry; hafnium compounds; low energy electron | |
| diffraction; passivation; permittivity; refractive index; silicon; silicon | |
| compounds; surface cleaning | |
| /ID | Identifiers: high-k dielectric stack-ellipsometry; electron diffraction; |
| interfacial oxides; silicon interface; dielectric constant; SiO/sub 2/ | |
| replacement; silicon cleaning; MOS; HF/H/sub 2/O etch; Shiraki clean; Si | |
| (100) surface; conventional single-wave length ellipsometer; low energy | |
| electron diffraction; LEED; silicon surface; hydrogen passivated surface; | |
| interfacial oxide thickness; high-k gate stack; high vacuum condition; | |
| HfO/sub 2/ gate dielectric layer; 0.7 to 0.9 nm; HfO/sub 2/-SiO/sub 2/; Si | |
| Copyright 2004, IEE |
| SEARCH SUFFIX |
DISPLAY CODE |
FIELD NAME |
INDEXING |
SELECT EXAMPLES |
|---|---|---|---|---|
| None | None | All Basic Index Fields | Word | S GRADE(W)MATERIAL? |
| /AB | AB | Abstract | Word | S SILICON(W)INTERFACE/AB |
| /DE | DE | Descriptor1 | Word & Phrase |
S DIELECTRIC(W)MATERIAL?/DE S HAFNIUM COMPOUND?/DE |
| /ID | ID | Identifier2 | Word & Phrase |
S ELECTRON(W)DIFFRACT?/ID S SILICON SURFACE/ID |
| /TI | TI | Title | Word | S ELECTRON(W)DIFFRACTION/TI |
| SEARCH PREFIX |
DISPLAY CODE |
FIELD NAME |
INDEXING |
SELECT EXAMPLES |
|---|---|---|---|---|
| AA= | AA | IP Accession Number | Phrase | S AA=A2004-08-7865P-010 |
| AD= | AD | Patent Application Date | Phrase | S AD=20000118 |
| AU= | AU | Author | Phrase | S AU=HARRIS, H? |
| None | AV | Availability | ||
| None | AZ | DIALOG Accession Number | ||
| None | AZ | Dialog Accession Number | ||
| BN= | BN | International Standard Book Number (ISBN) | Phrase | S BN=0 7803 7815 6 |
| CL= | CL | Conference Location | Word | S CL=(AUSTIN(W)TX) |
| CP= | CP | Country of Publication | Phrase | S CP=USA |
| CS= | CS | Corporate Source | Word & Phrase |
S CS=(NANOTECH(W)CENTER) S CS=UNIV. CARLOS? |
| CT= | CT | Conference Title | Word | S CT=(ULSI(W)TECHNOLOGY) |
| CY= | CY | Conference Year | Phrase | S CY=2003 |
| DT= | DT | Document Type | Phrase | S DT=CONFERENCE PAPER |
| FS= | FS | File Segment | Phrase | S FS=INSPEC |
| JN= | JN | Journal Name | Phrase | S JN=ACTA MATERIALIA |
| LA= | LA | Language | Phrase | S LA=ENGLISH |
| PC= | PC | Patent Country | Phrase | S PC=EP |
| PI= | PI | Patent Issue Date | Phrase | S PI=20000726 |
| PN= | PN | Patent/Application Number | Phrase | S PN=EP 1022084 |
| PU= | PU | Publisher | Phrase | S PU=AIP? |
| PY= | PY | Publication Year | Phrase | S PY=2003 |
| RN= | RN | Report/Contract/Document Number | Word & Phrase |
S RN=207X S RN=S0042- 207X (02)00536-5 S RN=S0042207X(02)005365 |
| RT= | RT | Record Type | Phrase | S RT=ABSTRACT |
| SN= | SN | International Standard Serial Number (ISSN) | Phrase | S SN=0094-243X S SN=0094243X |
| SO= | SO | Source Information | Word | S SO=(ACTA(W)MATERIALIA AND VOL(W)49) |
| UD= | None | Update | Phrase | S UD=9999 |
| SUFFIX | FIELD NAME | EXAMPLES |
|---|---|---|
| /ABS | Abstract Present | S S1/ABS |
| /ENG | English Language | S S2/ENG |
| /NOABS | No Abstracts Present | S S5/NOABS |
| /NONENG | Non-English Language | S S4/NONENG |
| /YYYY | Publication Year | S S9/2001 |
| SORTABLE FIELDS | EXAMPLES |
|---|---|
| AU, AZ, CS, JN, PY, TI | SORT S3/ALL/JN SORT S5/ALL/PY/D |
| RANK FIELDS | EXAMPLES |
|---|---|
| All phrase- and numeric-indexed fields in the Additional Indexes can be ranked. Other RANK codes include: DE, ID | RANK DE RANK AU S4 |
| Display codes listed in the Search Options tables can be used to customize output. | TYPE S3/AU,TI,SO/1-5 PRINT S2/TI, CS, PY/ALL |
| NO. |
DIALOGWEB FORMAT |
RECORD CONTENT |
|---|---|---|
| 1 | -- | DIALOG Accession Number |
| 2 | -- | Full Record except Abstract |
| 3 | Medium | Bibliographic Citation |
| 4 | -- | Full Record with Tagged Fields |
| 5 | -- | Full Record |
| 6 | Short | Title and Publication Year |
| 7 | Long | Full Record except Indexing |
| 8 | Free | Title, Indexing, and Publication Year |
| 9 | Full | Full Record |
| K | -- | KWIC (Key Word In Context) displays a window of text; may be used alone or with other formats |
| FIELD NAME | EXAMPLES | ||
|---|---|---|---|
| If the accession number of a specific record is known, it can be used to display the record directly. | TYPE 221795/5 DISPLAY 220326/AU,TI PRINT 220796/9 |
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